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? semiconductor components industries, llc, 2015 august, 2016 ? rev. 11 1 publication order number: bc846bdw1t1/d bc846bdw1, bc847bdw1, bc848cdw1 dual general purpose transistors npn duals these transistors are designed for general purpose amplifier applications. they are housed in the sot?363/sc?88 which is designed for low power surface mount applications. features ? s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol bc846 bc847 bc848 unit collector ?emitter voltage v ceo 65 45 30 v collector ?base voltage v cbo 80 50 30 v emitter ?base voltage v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 100 100 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation per device fr? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot?363/sc?88 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 1x = specific device code x = b, f, g, l m = date code = pb?free package www. onsemi.com see detailed ordering and shipping information in the packag e dimensions section on page 6 of this data sheet. ordering information (note: microdot may be in either location) 1x m 1 6
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) bc846 bc847 bc848 v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ?emitter breakdown voltage (i c = 10 a, v eb = 0) bc846 bc847 bc848 v (br)ces 80 50 30 ? ? ? ? ? ? v collector ?base breakdown voltage (i c = 10 a) bc846 bc847 bc848 v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ?base breakdown voltage (i e = 1.0 a) bc846 bc847 bc848 v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) bc846b, bc847b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, bc847b bc847c, bc848c h fe ? ? 200 420 150 270 290 520 ? ? 450 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small? signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k ,f = 1.0 khz, bw = 200 hz) nf ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 3 typical characteristics ? bc846bdw1 0 100 200 300 400 500 600 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 1. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ?55 c 0 100 200 300 400 500 600 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ?55 c i c , collector current (a) h fe , dc current gain figure 2. dc current gain at v ce = 10 v 0.00 0.05 0.10 0.15 0.20 0.25 0.0001 0.001 0.01 0.1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 3. v ce(sat) at i c /i b = 10 150 c 25 c ?55 c i c /i b = 10 0 0.05 0.1 0.15 0.2 0.25 0.3 0.0001 0.001 0.01 0 .1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 4. v ce(sat) at i c /i b = 20 i c /i b = 20 150 c ?55 c 25 c 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 0.0001 0.001 0.01 0.1 v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 5. v be(sat) at i c /i b = 10 i c /i b = 10 150 c 25 c ?55 c 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 0.0001 0.001 0.01 0 .1 v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 6. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ?55 c
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 4 typical characteristics ? bc846bdw1 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base?emitter voltage (v) figure 7. v be(on) at v ce = 5 v 150 c 25 c ?55 c v ce = 5 v 10 100 1000 0.1 1 10 10 0 i c , collector current (ma) figure 8. current ? gain ? bandwidth product f t , current?gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 9. capacitances c ob c ib t a = 25 c i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector?emitter volt- age (v) i b , base current (ma) figure 10. collector saturation region i c = 10 ma 0.1 1 10 100 i b , base current (ma) figure 11. base?emitter temperature coefficient vb , temperature coefficient (mv/ c) ?55 c to 150 c vb , for v be ?0.2 ?0.6 ?1 ?1.4 ?1.8 ?2.2 ?2.6 ?3 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 10 0 v ce = 5 v
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 5 typical characteristics ? bc847bdw1 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 12. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ?55 c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ?55 c i c , collector current (a) h fe , dc current gain figure 13. dc current gain at v ce = 10 v 0.00 0.05 0.10 0.15 0.20 0.25 0.0001 0.001 0.01 0.1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 14. v ce at i c /i b = 10 150 c 25 c ?55 c i c /i b = 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0001 0.001 0.01 0 .1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 15. v ce at i c /i b = 20 i c /i b = 20 150 c ?55 c 25 c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0.0001 0.001 0.01 0.1 v be(sat) , base?emitt saturation voltage (v) i c /i b = 10 150 c 25 c ?55 c i c , collector current (a) figure 16. v be(sat) at i c /i b = 10 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0.0001 0.001 0.01 0 .1 v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 17. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ?55 c
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 6 typical characteristics ? bc847bdw1 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base?emitter voltage (v) figure 18. v be(on) at v ce = 5 v v ce = 5 v 150 c 25 c ?55 c 10 100 1000 0.1 1 10 10 0 i c , collector current (ma) figure 19. current ? gain ? bandwidth product f t , current?gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 20. capacitances c ob c ib t a = 25 c 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 10 0 i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector?emitter volt- age (v) i b , base current (ma) figure 21. collector saturation region i c = 10 ma 0.1 1 10 100 i b , base current (ma) figure 22. base?emitter temperature coefficient vb , temperature coefficient (mv/ c) ?55 c to 150 c vb , for v be ?0.2 ?0.6 ?1 ?1.4 ?1.8 ?2.2 ?2.6 ?3 v ce = 5 v
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 7 typical characteristics ? bc848cdw1 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain figure 23. dc current gain at v ce = 5 v v ce = 5 v 150 c 25 c ?55 c 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 v ce = 10 v 150 c 25 c ?55 c i c , collector current (a) h fe , dc current gain figure 24. dc current gain at v ce = 10 v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.0001 0.001 0.01 0.1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 25. v ce at i c /i b = 10 150 c 25 c ?55 c i c /i b = 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0001 0.001 0.01 0 .1 v ce(sat) , coll?emitt saturation voltage (v) i c , collector current (a) figure 26. v ce at i c /i b = 20 i c /i b = 20 150 c ?55 c 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0001 0.001 0.01 0.1 v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 27. v be(sat) at i c /i b = 10 i c /i b = 10 150 c 25 c ?55 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0 .1 v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 28. v be(sat) at i c /i b = 20 i c /i b = 20 150 c 25 c ?55 c
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 8 typical characteristics ? bc848cdw1 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.001 0.01 0.1 i c , collector current (a) v be(on) , base?emitter voltage (v) figure 29. v be(on) at v ce = 5 v v ce = 5 v 150 c 25 c ?55 c 10 100 1000 0.1 1 10 10 0 i c , collector current (ma) figure 30. current ? gain ? bandwidth product f t , current?gain ? bandwidth product v ce = 10 v t a = 25 c 1 10 0.1 1 10 100 c, capacitance (pf) v r , reverse voltage (v) figure 31. capacitances c ob c ib t a = 25 c i c = 10 ma i c = 20 ma i c = 50 ma i c = 100 ma t a = 25 c v ce , collector?emitter volt- age (v) i b , base current (ma) figure 32. collector saturation region 0.1 1 10 100 i b , base current (ma) figure 33. base?emitter temperature coefficient ?0.2 ?0.6 ?1 ?1.4 ?1.8 ?2.2 ?2.6 ?3 vb , temperature coefficient (mv/ c) ?55 c to 150 c vb , for v be v ce = 5 v
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 9 figure 34. thermal response t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k figure 35. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 35 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 34. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 1.0m 0.02 0.01
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 10 ordering information device markings package shipping ? bc846bdw1t1g 1b sot?363 (pb?free) 3,000 / tape & reel sbc846bdw1t1g* 1b sot?363 (pb?free) 3,000 / tape & reel bc847bdw1t1g 1f sot?363 (pb?free) 3,000 / tape & reel sbc847bdw1t1g* 1f sot?363 (pb?free) 3,000 / tape & reel bc847bdw1t3g 1f sot?363 (pb?free) 10,000 / tape & reel sbc847bdw1t3g* 1f sot?363 (pb?free) 10,000 / tape & reel nsvbc847bdw1t2g* 1f sot?363 (pb?free) 10,000 / tape & reel bc847cdw1t1g 1g sot?363 (pb?free) 3,000 / tape & reel sbc847cdw1t1g* 1g sot?363 (pb?free) 3,000 / tape & reel bc848cdw1t1g 1l sot?363 (pb?free) 3,000 / tape & reel NSVBC848CDW1T1G* 1l sot?363 (pb?free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 quali fied and ppap capable.
bc846bdw1, bc847bdw1, bc848cdw1 www. onsemi.com 11 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc846bdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.

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